NCE20P45Q

http://www.ncepower.com Pb Free Product NCE20P45Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P45Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-19V,ID =-45A RDS(ON) < 7mΩ @ VGS=-4.5V RDS(ON) < 9mΩ @ VGS=-2.5V RDS(ON) < 12mΩ @ VGS=-1.8V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Pin Assignment Application ● Load switch ● Battery protection Package Marking and Ordering Information DFN 3.3x3.3 EP top view Device Marking NCE20P45Q Device NCE20P45Q Device Package DFN 3.3x3.3 EP Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Drain Current-Continuous Dr...