P-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
NCE P-Channel Enhancement Mode Power MOSFET
Pb Free Product
NCE3415Y
Description
The NCE3415Y ...
Description
http://www.ncepower.com
NCE P-Channel Enhancement Mode Power MOSFET
Pb Free Product
NCE3415Y
Description
The NCE3415Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General Features
● VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V ESD Rating: 2500V HBM
● High Power and current handing capability ● Lead free product is acquired ● Surface mount package
Schematic diagram Marking and pin Assignment
Application
● PWM application ● Load switch
SOT-23-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
3415Y
NCE3415Y
SOT-23-3L
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Conti...
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