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NCE3415Y

NCE Power Semiconductor

P-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Pb Free Product NCE3415Y Description The NCE3415Y ...


NCE Power Semiconductor

NCE3415Y

File Download Download NCE3415Y Datasheet


Description
http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Pb Free Product NCE3415Y Description The NCE3415Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V ESD Rating: 2500V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram Marking and pin Assignment Application ● PWM application ● Load switch SOT-23-3L top view Package Marking and Ordering Information Device Marking Device Device Package 3415Y NCE3415Y SOT-23-3L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Conti...




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