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NCE2301C

NCE Power Semiconductor

P-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com Pb Free Product NCE2301C NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301C...


NCE Power Semiconductor

NCE2301C

File Download Download NCE2301C Datasheet


Description
http://www.ncepower.com Pb Free Product NCE2301C NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -15V,ID = -2.6A RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 80mΩ @ VGS=-4.5V D G S Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin assignment Application ● PWM applications ● Load switch SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package 2301C NCE2301C SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current -Pulsed (N...




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