P-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
Pb Free Product
NCE2301C
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE2301C...
Description
http://www.ncepower.com
Pb Free Product
NCE2301C
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE2301C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
General Features
● VDS = -15V,ID = -2.6A RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 80mΩ @ VGS=-4.5V
D G
S Schematic diagram
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Marking and pin assignment
Application
● PWM applications ● Load switch
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2301C
NCE2301C
SOT-23
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current -Pulsed (N...
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