NCE01H21TC

http://www.ncepower.com Pb Free Product NCE01H21TC NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H21TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications. General Features ● VDSS =100V,ID =210A RDS(ON) < 4.2mΩ @ VGS=10V （Typ：3.3 mΩ） ● Good stability and uniformity with high EAS ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Schematic diagram Application ● DC motor drive ● High efficiency synchronous rectification in SMPS ● Uninterruptible power supply ● High speed power switching ● Hard switched and high frequency circuits Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-247 top view Package Marking and Ordering Information Device Marking Device Device Package NCE01H21TC NCE01H21TC TO-247 Reel Size - Tape widt...