Document
http://www.ncepower.com
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE01H13WD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Pb Free Product
NCE01H13WD
General Features
● VDS =100V,ID =130A RDS(ON) <6.8mΩ @ VGS=10V
(Typ:5.2mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
TO-263T-2L top view
100% UIS TESTED! 100% ∆Vds TESTED!
Package Marking and Ordering Information
Device Marking NCE01H13WD
Device NCE01H13WD
Device Package TO-263T-2L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unles.