Document
http://www.ncepower.com
Pb Free Product
NCE0157AK
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0157AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = 100V,ID =57A RDS(ON) < 16mΩ @ VGS=10V
(Typ:12mΩ)
● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE0157AK
NCE0157AK
TO-252-2L
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 u.