NCE3035Q

http://www.ncepower.com Pb Free Product NCE3035Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3035Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =35A RDS(ON) < 7.0mΩ @ VGS=10V RDS(ON) < 12mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Secondary side synchronous rectifier ● High side switch in POL DC/DC converter Schematic diagram Marking and pin assignment 100% UIS TESTED! DFN 3x3 EP top view Package Marking and Ordering Information Device Marking Device Device Package NCE3035Q NCE3035Q DFN 3x3 EP Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise ...