Document
http://www.ncepower.com
Pb Free Product
NCE2007N
SNCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE2007N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
● VDS = 20V,ID =6.5A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
D1 G1
G2
D2
S1 S2
Schematic diagram
Application
● Battery protection ● Load switch ● Power management
Marking and pin assignment
SOT23-6L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2007N
NCE2007N
SOT23-6L
Reel Size Ø330mm
Tape width 12mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
.