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NCE2007N Dataheets PDF



Part Number NCE2007N
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Datasheet NCE2007N DatasheetNCE2007N Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCE2007N SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE2007N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID =6.5A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acq.

  NCE2007N   NCE2007N



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http://www.ncepower.com Pb Free Product NCE2007N SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE2007N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID =6.5A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package D1 G1 G2 D2 S1 S2 Schematic diagram Application ● Battery protection ● Load switch ● Power management Marking and pin assignment SOT23-6L top view Package Marking and Ordering Information Device Marking Device Device Package 2007N NCE2007N SOT23-6L Reel Size Ø330mm Tape width 12mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS .


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