ADRF5132

Data Sheet High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz ADRF5132 FEATURES Reflective, 50 Ω design Low insertion loss: 0.6 dB typical at 2.7 GHz High power handling at TCASE = 105°C Long-term (>10 years operation) Peak power: 43 dBm CW power: 38 dBm LTE power average (8 dB PAR): 35 dBm Single event (<10 sec operation) LTE power average (8 dB PAR): 41 dBm High linearity P0.1dB: 42.5 dBm typical IP3: 65 dBm typical at 2.0 GHz to 4.0 GHz ESD ratings HBM: 2 kV, Class 2 CDM: 1.25 kV Single positive supply: 5 V Positive control, CMOS/TTL compatible 16-lead, 3 mm × 3 mm LFCSP package APPLICATIONS Cellular/4G infrastructure Wireless infrastructure Military and high reliability applications Test equipment Pin diode replacement GENERAL DESCRIPTION The ADRF5132 is a high power, reflective, 0.7 GHz to 5.0 GHz, silicon, single-pole, double-throw (SPDT) reflective switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastruc...