BCV62C

PNP Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emitter-saturation voltage q BCV 62 Type BCV 62 A BCV 62 B BCV 62 C Marking 3Js 3Ks 3Ls Ordering Code (tape and reel) Q62702-C2158 Q62702-C2159 Q62702-C2160 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Collector-emitter voltage (transistor T1) Collector-base voltage (open emitter) (transistor T1) Emitter-base voltage Collector current Collector peak current Base peak current (transistor T1) Total power dissipation, TS = 99 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point 1) 2) Symbol VCE0 VCB0 VEBS IC ICM IBM Ptot Tj Tstg Values 30 30 6 100 200 200 300 150 – 65 … + 150 Unit V mA mW ˚C Rth JA Rth JS ≤ ≤ 240 170 K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BCV 62 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics for transistor T1 Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 ˚C DC current gain1) IC = 0.1 mA, VCE = 5 V IC = 2 mA, VCE = 5 V V(BR)CE0 V(BR)CB0 V(BR)EBS ICB0 – – hFE BCV...