BCV62
PNP Silicon Double Transistor
To be used as a current mirror Good thermal coupling and VBE matching High cur...
BCV62
PNP Silicon Double
Transistor
To be used as a current mirror Good thermal coupling and VBE matching High current gain Low collector-emitter saturation voltage
C1 (2) C2 (1)
3 4 2 1
Tr.1 Tr.2
VPS05178
E1 (3)
E2 (4)
EHA00013
Type BCV62A BCV62B BCV62C
Maximum Ratings Parameter
Marking 3Js 3Ks 3Ls 1 = C2 1 = C2 1 = C2
Pin Configuration 2 = C1 2 = C1 2 = C1 3 = E1 3 = E1 3 = E1 4 = E2 4 = E2 4 = E2
Package SOT143 SOT143 SOT143
Symbol VCEO VCBO VEBS IC ICM IBM Ptot Tj Tstg
Value 30 30 6 100 200 200 300 150 -65 ... 150
Unit V
Collector-emitter voltage (
transistor T1) Collector-base voltage (open emitter) (
transistor T1) Emitter-base voltage DC collector current Peak collector current Base peak current (
transistor T1) Total power dissipation, TS = 99 °C Junction temperature Storage temperature
Thermal Resistance
mA
mW °C
Junction - soldering point1)
RthJS
170
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Jul-11-2001
BCV62
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics of T1 Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 0.1 mA, VCE = 5 V DC current gain 1) IC = 2 mA, VCE = 5 V BCV62A BCV62B BCV62C Collector-e...