BCV62A

DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BCV62 PNP general purpose double transistor Product specification Supersedes data of 1997 Jun 18 1999 Apr 08 Philips Semiconductors Product specification PNP general purpose double transistor FEATURES Low current (max. 100 mA) Low voltage (max. 30 V) Matched pair. APPLICATIONS For use in applications where the working point must be independent of temperature Current mirrors. handbook, halfpage 4 BCV62 PINNING PIN 1 2 3 4 collector TR1 emitter TR1 emitter TR2 DESCRIPTION collector TR2; base TR1 and TR2 3 2 1 DESCRIPTION PNP double transistor in a SOT143B plastic package. NPN complement: BCV61. MARKING TYPE NUMBER BCV62 BCV62A MARKING CODE 3Mp 3Jp TYPE NUMBER BCV62B BCV62C MARKING CODE 3Kp 3Lp Top view 1 2 MAM292 TR1 TR2 3 4 Fig.1 Simplified outline (SOT143B) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBS IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage TR1 collector-emitter voltage TR1 emitter-base voltage collector current (DC) peak collector current peak base current TR1 total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base VCE = 0 − − − − − − − −65 − −65 MIN. MAX. −30 −30 −6 −100 −200 −200 250 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 08 2 Philips Semiconductors ...