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BCV61B Dataheets PDF



Part Number BCV61B
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching)
Datasheet BCV61B DatasheetBCV61B Datasheet (PDF)

NPN Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emitter-saturation voltage q BCV 61 Type BCV 61 A BCV 61 B BCV 61 C Marking 1Js 1Ks 1Ls Ordering Code (tape and reel) Q62702-C2155 Q62702-C2156 Q62702-C2157 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Collector-emitter voltage (transistor T1) Collector-base voltage (open emitter) (transistor T1) Emitter-base voltage Collector c.

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NPN Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emitter-saturation voltage q BCV 61 Type BCV 61 A BCV 61 B BCV 61 C Marking 1Js 1Ks 1Ls Ordering Code (tape and reel) Q62702-C2155 Q62702-C2156 Q62702-C2157 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Collector-emitter voltage (transistor T1) Collector-base voltage (open emitter) (transistor T1) Emitter-base voltage Collector current Collector peak current Base peak current (transistor T1) Total power dissipation, TS ≤ 99 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point 1) 2) Symbol VCE0 VCB0 VEBS IC ICM IBM Ptot Tj Tstg Values 30 30 6 100 200 200 300 150 – 65 … + 150 Unit V mA mW ˚C Rth JA Rth JS ≤ ≤ 240 170 K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BCV 61 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics for transistor T1 Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 ˚C DC current gain1) IC = 0.1 mA, VCE = 5 V IC = 2 mA, VCE = 5 V V(BR)CE0 V(BR)CB0 V(BR)EBS ICB0 – – hFE BCV 61 A BCV 61 B BCV 61 C VCEsat – – VBEsat – – VBE 580 – 660 – 700 770 700 900 – – 90 200 250 600 100 110 200 420 – 180 290 520 220 450 800 mV – – 15 5 nA µA – 30 30 6 – – – – – – V Values typ. max. Unit Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage1) IC = 10 mA, IC = 0.5 mA IC = 100 mA, IC = 5 mA Base-emitter voltage IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V 1) Pulse test conditions: t ≤ 300 µs, D = 2 %. Semiconductor Group 2 BCV 61 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics for transistor T2 Base-emitter forward voltage IE = 10 µA IE = 250 mA Matching of transistor T1 and transistor T2 at IE2 = 0.5 mA and VCE1 = 5 V TA = 25 ˚C TA = 150 ˚C Thermal coupling of transistor T1 and T1: VCE = 5 V transistor T21) Maximum current for thermal stability of IC1 AC characteristics for transistor T1 Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, IC = iC = 0, f = 1 MHz Input capacitance VEB = 0.5 V, IC = iC = 0, f = 1 MHz Noise figure IC = 200 µA, VCE = 5 V, RS = 2 kΩ f = 1 kHz, B = 200 Hz Input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz fT Ccb Cibo F – – – – 250 3 8 2 – – – – dB MHz pF VBES 0.4 – – – – 1.8 – IC1 / IC2 IC1 / IC2 IE2 0.7 0.7 – – – 5 1.3 1.3 – mA V Values typ. max. Unit h11e h12e h21e h22e – – 100 – 4.5 2 – 30 – – 900 – kΩ 10– 4 – µS 1) Without emitter resistor. Device mounted on alumina 15 mm × 16.5 mm × 0.7 mm. Semiconductor Group 3 BCV 61 Test circuit for current matching Note: Voltage drop at contacts: VCO < 2 VT = 16 mV 3 Characteristic for determination of VCE1 at specified RE range with IE2 as parameter under condition of IC1 / IE2 = 1.3 Note: BCV 61 with emitter resistors Semiconductor Group 4 BCV 61 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Permissible pulse load Ptot max/Ptot DC = f (tp) Semiconductor Group 5 .


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