BCU83–SMD
MECHANICAL DATA Dimensions in mm
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
4 .5 1 .6 1 .5
Ideal for high curr...
BCU83–SMD
MECHANICAL DATA Dimensions in mm
NPN EPITAXIAL PLANAR SILICON
TRANSISTOR
4 .5 1 .6 1 .5
Ideal for high current driver applications requiring low loss devices
4 .2 5 m a x .
2 .5
FEATURES
LOW VCE(SAT) HIGH CURRENT HIGH ENERGY RATING
0 .4 0 0 .5 0 1 .5 3 .0
-
+
*
1 .0 0 .4 0
APPLICATIONS
ANY HIGH CURRENT DRIVER APPLICATIONS REQUIRING
SOT89
EFFICIENT LOW LOSS DEVICES
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCEO VCBO VEBO IC IC(PK) Ptot Tstg Tj Collector – Emitter voltage Collector – Base voltage Emitter – Base voltage Collector current Peak Collector current Total Dissipation at Tcase = 25°C Storage Temperature Maximum Operating Junction Temperature
Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail:
[email protected] Website: http://www.semelab.co.uk
20V 60V 6V 5A 8A 0.9W –55 to 150°C 150°C
Prelim. 1/94
Magnatec.
BCU83–SMD
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
ICBO IEBO VCE(sat)* VBE(sat)* hFE* fT Cob Parameter Collector cut–off current Emitter cut–off current Collector – Emitter saturation voltage Base – Emitter saturation voltage DC current gain Transition frequency Output capacitance Test Conditions VCB = 50V IE = 0 VEB = 5V IC = 3A IC = 3A VCE = 2V VCE = 2V VCE = 10V VCB = 10V IC = 0 IB = 60mA IB = 60mA IC = 0.5A IC = 3A IC = 50mA f = 1MHz 0.6 100 75 120 45 Min. Typ. Max. 1.0 1.0 0.5 1.5 560 Unit. mA
m
A
V V — MHz pF
* Pulse test tp = 300ms , d £ 2%
Magnatec.
Telephone...