BCU81-SMD

BCU81-SMD MECHANICAL DATA Dimensions in mm 4 .5 1 .6 1 .5 NPN EPITAXIAL PLANAR SILICON TRANSISTOR Ideal for high current driver applications requiring low loss devices 4 .2 5 m a x . 2 .5 FEATURES LOW VCE(SAT) HIGH CURRENT HIGH ENERGY RATING 0 .4 0 0 .5 0 1 .5 3 .0 1 .0 0 .4 0 APPLICATIONS + * ANY HIGH CURRENT DRIVER APPLICATIONS REQUIRING EFFICIENT LOW LOSS DEVICES SOT89 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICP PC Tj Tstg Collector – Base voltage Collector – Emitter voltage (IB = 0) Emitter – Base voltage Collector current Collector Current (Pulse) Collector Dissipation (Mounted on Ceramic Board (250mm2 x 0.8mm) Junction Temperature Storage Temperature 30V 10V 6V 3A 5A 500mW 1.3W 150°C –55 to 150°C Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk Prelim.9/98 BCU81-SMD ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE fT Cob Collector – Emitter Base Breakdown Voltage Collector – Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut–Off Current Emitter Cut–Off Current DC Current Gain Transition frequency Output Capacitance Test Conditions IC = 1mA IC = 10mA IC = 0 VCB = 20V VBE = 4V VCE = 2V VCE = 10V VCB = 10V RBE = 0 IE = 0 IE = 10mA IE = 0 IC = 0 IC = 3A IC = 50mA f = 1MHz Min. 10 30 6 Typ. Max. Unit. V V V nA nA — MHz pF 100 100 140 30 210 200 Ma...