PNP Silicon Digital Transistor
• Built in bias resistor (R1= 4.7 kΩ, R2= 4.7 kΩ) • Pb-free (RoHS compliant) package • Qu...
PNP Silicon Digital
Transistor
Built in bias resistor (R1= 4.7 kΩ, R2= 4.7 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101
BCR562
32 1
C 3
R1 R2
1 B
Type BCR562
2
E
EHA07183
Marking XUs
Pin Configuration 1=B 2=E 3=C
Package SOT23
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage Collector-base voltage Input forward voltage Input reverse voltage Collector current Total power dissipationTS ≤ 79 °C Junction temperature Storage temperature
VCEO VCBO Vi(fwd) Vi(rev) IC Ptot
Tj Tstg
50 50 30 10 500 330
150 -65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point1)
RthJS
≤ 215
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit V
mA mW °C
Unit K/W
1 2011-07-28
BCR562
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR...
