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BCR400W Dataheets PDF



Part Number BCR400W
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Active Bias Controller
Datasheet BCR400W DatasheetBCR400W Datasheet (PDF)

BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from from less than 0.2mA up to more than 200mA • Ideal supplement for SIEGET and other RF transistors • also usable as current source up to 5mA Type Marking Ordering Code Pin Configuration Package BCR 400W W4s Q62702-C2481 1 GND/ENPN 2 Contr/.

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BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from from less than 0.2mA up to more than 200mA • Ideal supplement for SIEGET and other RF transistors • also usable as current source up to 5mA Type Marking Ordering Code Pin Configuration Package BCR 400W W4s Q62702-C2481 1 GND/ENPN 2 Contr/BNPN 3 VS 4 Rext/CNPN SOT-343 (ENPN,BNPN,CNPN are electrodes of a stabilized NPN transistor) Maximum Ratings Parameter Supply voltage Control current Control voltage Reverse voltage between all terminals Total power dissipation, TS = 117°C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Symbol Values 18 10 16 0.5 330 150 - 65 ... + 150 ≤ 170 ≤ 100 Unit V mA V mW °C VS IContr. VContr. VR Ptot Tj Tstg RthJA RthJS K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu Semiconductor Group 1 Nov-27-1996 BCR 400W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Additional current consumption Values typ. max. Unit I0 20 0.1 40 µA mA - VS = 3 V Lowest stabilizing current Imin VS = 3 V DC Characteristics with stabilized NPN-Transistors Lowest sufficient battery voltage VSmin 1.6 0.65 0.08 0.15 0.2 - V IB (NPN) < 0.5 mA Voltage drop (VS - VCE) Vdrop ∆ IC /IC ∆ IC /IC ∆ IC /IC %/K ∆VS/VS ∆hFE/hFE IC = 25 mA Change of IC versus hFE hFE > 50 Change of IC versus VS VS > 3 V Change of IC versus TA Semiconductor Group 2 Nov-27-1996 BCR 400W Collector current IC = f(hFE) IC and hFE refer to stabilized NPN Transistor Parameter Rext. (Ω) 10 3 mA Collector Current IC = f(VS) of stabilized NPN Transistor Parameter Rext. (Ω) 10 3 mA 2.1 5.9 12.4 IC 10 2 5.9 IC 10 2 10 1 67 10 1 67 10 0 760 10 0 760 4.3k 10 -1 0 10 -1 0 50 100 150 200 250 350 hFE 2 4 6 8 V VS 11 Voltage drop Vdrop = f(IC) Collector current IC = f(Rext.) of stabilized NPN Transistor 1.0 10 3 mA V drop V IC 10 2 0.8 10 1 0.7 10 0 0.6 0.5 -2 10 10 -1 10 0 10 1 10 2 mA 10 3 10 -1 0 10 10 1 10 2 10 3 IC Ohm Rext. Semiconductor Group 3 Nov-27-1996 BCR 400W Collector current TA = f(IC) of stabilized NPN Transistor Parameter: Rext.(Ω) 10 3 mA Control current I = f(Rext.) in current source application 10 1 IC 2.2 10 2 6 IContr. mA 26 10 1 65 10 0 290 10 0 760 4.3k 10 -1 -40 -20 0 20 40 60 80 100 120 °C 160 TA 10 -1 -1 10 10 0 10 1 10 2 KOhm Rext. Control current I = f(TA) in current source application Control current I = f(VS) in current source application 1.5 mA 1.3 2.0 mA IContr. 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -20 IContr. 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 °C TA 100 0 1 2 3 4 5 6 7 8 V VS 10 Semiconductor Group 4 Nov-27-1996 BCR 400W Total power dissipation Ptot = f (TA*;TS) * Package mounted on epoxy 400 mW Ptot 300 Note that up to TS = 130°C TS TA it is not possible to exceed Ptot respecting the maximum ratings of VS and IContr. The collector or drain current (respectively) of the stabilized RF transistor 250 200 150 100 does not affect BCR 400 directly, as it provides just the base current. 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Typical application for GaAs FET with active bias controller Semiconductor Group 5 Nov-27-1996 BCR 400W RF transistor controlled by BCR400 Be aware that BCR 400 stabilizes bias current of transistors in an active control loop. In order to avoid loop oscillation (hunting), time constants must be chosen adequately, i.e. C1 >= 10 x C2 RX/TX antenna switch, compatible to control logic and working at wide battery voltage range Semiconductor Group 6 Nov-27-1996 BCR 400W Low voltage reference Precision timer with BCR 400 providing constant charge current Semiconductor Group 7 Nov-27-1996 .


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