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BCR3PM

Mitsubishi Electric Semiconductor

TRIAC

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3PM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR3PM OUTLINE DRAWING ...


Mitsubishi Electric Semiconductor

BCR3PM

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Description
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3PM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR3PM OUTLINE DRAWING 10.5 MAX 5.2 Dimensions in mm 2.8 17 5.0 1.2 TYPE NAME VOLTAGE CLASS φ3.2±0.2 13.5 MIN 3.6 1.3 MAX 0.8 2.54 2.54 8.5 0.5 2.6 IT (RMS) ........................................................................ 3A VDRM ..............................................................400V/600V IFGT !, IRGT !, IRGT # ......................... 30mA (10mA) V5 Viso ........................................................................ 1500V UL Recognized: File No. E80276 123 2 ∗ Measurement point of case temperature 1 1 T1 TERMINAL 2 T2 TERMINAL 3 3 GATE TERMINAL TO-220F APPLICATION Contactless AC switches, light dimmer, electric blankets, control of household equipment such as electric fan, solenoid drivers, small motor control, other general purpose control applications MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Viso Parameter RMS on-state current Surge on-state current I2t for fusing Conditions Commercial frequency, sine full wave 360 ° conduction, Tc=107°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 4.5 Ratings 3.0 30 3.7 3 0.3 6 0.5 –40 ~ +125 –40 ~ +125 Unit A A A2s W ...




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