GS816036BT-250

GS816018w/3w2w/3.D6aBtaTSh-2ee5t04U/2.c0o0m/150 100-Pin TQFP Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 250 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features FT pin for user-configurable flow through or pipeline operation Single Cycle Deselect (SCD) operation 2.5 V or 3.3 V +10%/–10% core power supply 2.5 V or 3.3 V I/O supply LBO pin for Linear or Interleaved Burst mode Internal input resistors on mode pins allow floating mode pins Default to Interleaved Pipeline mode Byte Write (BW) and/or Global Write (GW) operation Internal self-timed write cycle Automatic power-down for portable applications JEDEC-standard 100-lead TQFP package RoHS-compliant 100-lead TQFP package available Functional Description Applications The GS816018/32/36BT is an 18,874,368-bit (16,777,216-bit for x32 version) high performance synchronous SRAM with a 2-bit burst address counter. Although of a type origin...