BCR191.../SEMB1
PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built ...
BCR191.../SEMB1
PNP Silicon Digital
Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 22kΩ , R2 = 22kΩ ) For 6-PIN packages: two (galvanic) internal isolated
transistors with good matching in one package
BCR191/F/L3 BCR191T/W
C 3
BCR191S SEMB1
C1 6 B2 5 E2 4
R1
R1
R2 TR2 R1 R2 TR1
R2
1 B
2 E
EHA07183
1 E1
2 B1
3 C2
EHA07173
Type
Marking
Pin Configuration
Package
BCR191 BCR191F BCR191L3 BCR191S BCR191T BCR191W SEMB1
WOs WOs WO WOs WOs WOs WO
1=B 1=B 1=B 1=B 1=B
2=E 2=E 2=E 2=E 2=E
3=C 3=C 3=C 3=C 3=C
-
-
-
SOT23 TSFP-3 TSLP-3-4 SC75 SOT323
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1=E1 2=B2 3=C2 4=E2 5=B2 6=C1 SOT666
1
May-18-2004
BCR191.../SEMB1
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR191, TS ≤ 102°C BCR191F, TS ≤ 128°C BCR191L3, TS ≤ 135°C BCR191S, T S ≤ 115°C BCR191T, TS ≤ 109°C BCR191W, TS ≤ 124°C SEMB1, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR191 BCR191F BCR191L3 BCR191S BCR191T BCR191W SEMB1
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 10 30 100 200 250 250 250 250 250 250
Unit V
mA mW
Tj Tstg Symbol RthJS
150 150 ... -65 Value
≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 105 ≤ 300
°C
Unit K/W
2
May-18-2004
BCR191.../SEMB1
Ele...