BCR189...
PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bia...
BCR189...
PNP Silicon Digital
Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 22kΩ)
BCR189/F/L3 BCR189T
C 3
R1
1 B
2 E
EHA07180
Type BCR189 BCR189F BCR189L3 BCR189T
Marking W2s W2s W2 W2s 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E
Pin Configuration 3=C 3=C 3=C 3=C -
Package SOT23 TSLP-3 TSLP-3-4 SC75
1
Aug-29-2003
BCR189...
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR189, TS ≤ 102°C BCR189F, TS ≤ 128°C BCR189L3, TS ≤ 135°C BCR189T, TS ≤ 109°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BCR189 BCR189F BCR189L3 BCR189T
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 5 30 100 200 250 250 250
Unit V
mA mW
Tj Tstg Symbol RthJS
150 150 ... -65 Value
≤ 240 ≤ 90 ≤ 60 ≤ 165
°C
Unit K/W
2
Aug-29-2003
BCR189...
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO V(BR)EBO I CBO h FE VCEsat Vi(off) Vi(on) R1
50 5 120 0,4 0,5 15 -
22 200 3
100 630 0,3 0,8 1,1 29 kΩ
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
VCB = 40 V, IE = 0
n...