BCR169T

BCR169.../SEMB3 PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7k Ω) For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR169/F/L3 BCR169T/W C 3 BCR169S/U SEMB3 C1 6 B2 5 E2 4 R1 R1 TR1 R1 TR2 1 B 2 E EHA07180 1 E1 2 B1 3 C2 EHA07266 Type Marking Pin Configuration Package BCR169 BCR169F BCR169L3 BCR169S BCR169T BCR169U BCR169W SEMB3 WSs WSs WS WSs WSs WSs WSs WS 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C - - - SOT23 TSFP-3 TSLP-3-4 SC75 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 1 May-18-2004 BCR169.../SEMB3 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR169, TS ≤ 102°C BCR169F, TS ≤ 128°C BCR169L3, TS ≤ 135°C BCR169S, T S ≤ 115°C BCR169T, TS ≤ 109°C BCR169U, TS ≤ 118°C BCR169W, TS ≤ 124°C SEMB3, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR169 BCR169F BCR169L3 BCR169S BCR169T BCR169U BCR169W SEMB3 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 15 100 200 250 250 250 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 1...