BCR166T

BCR166.../SEMB13 PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7kΩ , R2 = 47kΩ ) BCR166/F/L3 BCR166T/W C 3 SEMB13 C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07183 1 E1 2 B1 3 C2 EHA07173 Type BCR166 BCR166F BCR166L3 BCR166T BCR166W SEMB13 Marking WTs WTs WT WTs WTs WB 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C - Package SOT23 TSFP-3 TSLP-3-4 SC75 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 1 Jun-14-2004 BCR166.../SEMB13 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR166, TS ≤ 102°C BCR166F, TS ≤ 128°C BCR166L3, TS ≤ 135°C BCR166T, TS ≤ 109°C BCR166W, TS ≤ 124°C SEMB13, T S ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR166 BCR166F BCR166L3 BCR166T BCR166W SEMB13 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 15 100 200 250 250 250 250 250 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 105 ≤ 300 Unit V mA mW Tj Tstg Symbol RthJS °C Unit K/W 2 Jun-14-2004 BCR166.../SEMB13 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Co...