BCR166.../SEMB13
PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built...
BCR166.../SEMB13
PNP Silicon Digital
Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7kΩ , R2 = 47kΩ )
BCR166/F/L3 BCR166T/W
C 3
SEMB13
C1 6
B2 5
E2 4
R1
R1
R2 TR2 R1 R2 TR1
R2
1 B
2 E
EHA07183
1 E1
2 B1
3 C2
EHA07173
Type BCR166 BCR166F BCR166L3 BCR166T BCR166W SEMB13
Marking WTs WTs WT WTs WTs WB 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C -
Package SOT23 TSFP-3 TSLP-3-4 SC75 SOT323
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1
Jun-14-2004
BCR166.../SEMB13
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR166, TS ≤ 102°C BCR166F, TS ≤ 128°C BCR166L3, TS ≤ 135°C BCR166T, TS ≤ 109°C BCR166W, TS ≤ 124°C SEMB13, T S ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR166 BCR166F BCR166L3 BCR166T BCR166W SEMB13
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 5 15 100 200 250 250 250 250 250 150 -65 ... 150 Value
≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 105 ≤ 300
Unit V
mA mW
Tj Tstg Symbol RthJS
°C
Unit K/W
2
Jun-14-2004
BCR166.../SEMB13
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V
IC = 100 µA, IB = 0
Co...