BCR153U
PNP Silicon Digital Transistor Preliminary data
Switching circuit, inverter, interface circuit,
5 6
4
drive...
BCR153U
PNP Silicon Digital
Transistor Preliminary data
Switching circuit, inverter, interface circuit,
5 6
4
driver circuit
Two ( galvanic) internal isolated
Transistors
with good matching in one package
Built in resistor (R 1=2.2k, R2=2.2k)
C1 6 B2 5 E2 4
3 2 1
VPW09197
R2 R1 TR1 R2 1 E1 2 B1 3 C2
EHA07174
TR2 R1
Type BCR153U
Maximum Ratings Parameter
Marking WBs
Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Value 50 50 5 10 100 250 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 118 °C Junction temperature Storage temperature
mA mW °C
Thermal Resistance Junction - soldering point 1) RthJS
130
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Dec-12-2001
BCR153U
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 5 V, IC = 0 DC current gain 1) IC = 20 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 20 mA, IB = 1 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio R1 R1 /R2 Vi(on)...
