BCR153...
PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in res...
BCR153...
PNP Silicon Digital
Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=2.2kΩ, R2 =2.2kΩ) For 6-PIN packages: two (galvanic) internal isolated
transistors with good matching in one package
BCR153/F/L3 BCR153T
C 3
BCR153U
C1 6
B2 5
E2 4
R1
R1
R2 TR2 R1 R2 TR1
R2
1 B
2 E
EHA07183
1 E1
2 B1
3 C2
EHA07173
Type BCR153 BCR153U BCR153L3 BCR153T BCR153F
Marking WBs WBs WB WBs WBs 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E
Pin Configuration 3=C 3=C 3=C 3=C -
Package SOT23 TSLP-3-4 SC75 TSFP-3
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
1
Aug-29-2003
BCR153...
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR153, TS ≤ 102°C BCR153F, TS ≤ 128°C BCR153L3, TS ≤ 135°C BCR153T, TS ≤ 109°C BCR153U, TS ≤ 118°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR153 BCR153F BCR153L3 BCR153T BCR153U
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 5 10 100 200 250 250 250 250
Unit V
mA mW
Tj Tstg Symbol RthJS
150 -65 ... 150 Value
≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 133
°C
Unit K/W
2
Aug-29-2003
BCR153...
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V
IC = 100 µA, IB = 0...