BCR153L3

BCR153... PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=2.2kΩ, R2 =2.2kΩ) For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR153/F/L3 BCR153T C 3 BCR153U C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07183 1 E1 2 B1 3 C2 EHA07173 Type BCR153 BCR153U BCR153L3 BCR153T BCR153F Marking WBs WBs WB WBs WBs 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E Pin Configuration 3=C 3=C 3=C 3=C - Package SOT23 TSLP-3-4 SC75 TSFP-3 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1 Aug-29-2003 BCR153... Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR153, TS ≤ 102°C BCR153F, TS ≤ 128°C BCR153L3, TS ≤ 135°C BCR153T, TS ≤ 109°C BCR153U, TS ≤ 118°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR153 BCR153F BCR153L3 BCR153T BCR153U 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 10 100 200 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 133 °C Unit K/W 2 Aug-29-2003 BCR153... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0...