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HY5012A

HOOYI
Part Number HY5012A
Manufacturer HOOYI
Description N-Channel Enhancement Mode MOSFET
Published May 23, 2018
Detailed Description HY5012W/A Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Dr...
Datasheet PDF File HY5012A PDF File

HY5012A
HY5012A

Overview
HY5012W/A Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 125 ±25 175 55 to 175 300 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 1100** 300 196 500 250 0.
3 40 EAS Avalanche Energy, Single Pulsed L=0.
5mH 2000*** Note * Repetitive rating ; pulse width limiited by junct...


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