BCR142F

BCR142... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22kΩ, R2 =47kΩ) BCR142/F/L3 BCR142T/W C 3 R1 R2 1 B 2 E EHA07184 Type BCR142 BCR142F BCR142FL3 BCR142T BCR142W Marking WZs WZs WZ WZs WZs 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E Pin Configuration 3=C 3=C 3=C 3=C 3=C - Package SOT23 TSFP-3 TSLP-3-4 SC75 SOT323 1 Aug-29-2003 BCR142... Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR142, TS ≤ 102°C BCR142F, TS ≤ 128°C BCR142L3, TS ≤ 135°C BCR142T, TS ≤ 109°C BCR142W, TS ≤ 124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR142 BCR142F BCR142L3 BCR142T BCR142W 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 10 30 100 200 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 105 °C Unit K/W 2 Aug-29-2003 BCR142... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 70 0.5 0.8 15 0.42 - 22 0.47 150 3 100 227 0.3 1.2 2.5 29 0.52 kΩ C...