BCR142...
NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bia...
BCR142...
NPN Silicon Digital
Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22kΩ, R2 =47kΩ)
BCR142/F/L3 BCR142T/W
C 3
R1 R2
1 B
2 E
EHA07184
Type BCR142 BCR142F BCR142FL3 BCR142T BCR142W
Marking WZs WZs WZ WZs WZs 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E
Pin Configuration 3=C 3=C 3=C 3=C 3=C -
Package SOT23 TSFP-3 TSLP-3-4 SC75 SOT323
1
Aug-29-2003
BCR142...
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR142, TS ≤ 102°C BCR142F, TS ≤ 128°C BCR142L3, TS ≤ 135°C BCR142T, TS ≤ 109°C BCR142W, TS ≤ 124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR142 BCR142F BCR142L3 BCR142T BCR142W
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 10 30 100 200 250 250 250 250
Unit V
mA mW
Tj Tstg Symbol RthJS
150 -65 ... 150 Value
≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 105
°C
Unit K/W
2
Aug-29-2003
BCR142...
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2
50 70 0.5 0.8 15 0.42
-
22 0.47
150 3
100 227 0.3 1.2 2.5 29 0.52
kΩ
C...