BCR141.../SEMH1
NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built ...
BCR141.../SEMH1
NPN Silicon Digital
Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22kΩ, R2=22kΩ) For 6-PIN packages: two (galvanic) internal isolated
transistors with good matching in one package
BCR141/F/L3 BCR141T/W
C 3
BCR141S/U SEMH1
C1 6 B2 5 E2 4
R1
R1
R2 TR2 R1 R2 TR1
R2
1 B
2 E
EHA07184
1 E1
2 B1
3 C2
EHA07174
Type BCR141 BCR141F BCR141L3 BCR141S BCR141T BCR141U BCR141W SEMH1
Marking WDs WDs WD WDs WDs WDs WDs WD 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C -
Package SOT23 TSFP-3 TSLP-3-4 SC75 SOT323
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1
Jun-14-2004
BCR141.../SEMH1
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR141, TS ≤ 102°C BCR141F, TS ≤ 128°C BCR141L3, TS ≤ 135°C BCR141S, T S ≤ 115°C BCR141T, TS ≤ 109°C BCR141U, TS ≤ 118°C BCR141W, TS ≤ 124°C SEMH1, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR141 BCR141F BCR141L3 BCR141S BCR141T BCR141U BCR141W SEMH1
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 10 30 100 200 250 250 250 250 250 250 250
Unit V
mA mW
Tj Tstg Symbol RthJS
150 -65 ... 150 Value
≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤...