BCR139...
NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bia...
BCR139...
NPN Silicon Digital
Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22kΩ)
BCR139/F/L3 BCR139T
C 3
R1
1 B
2 E
EHA07264
Type
Marking
Pin Configuration
Package
BCR139 BCR139F BCR139L3 BCR139T
WYs WYs WY WYs
1=B 1=B 1=B 1=B
2=E 2=E 2=E 2=E
3=C 3=C 3=C 3=C
-
-
-
SOT23 TSFP-3 TSLP-3-4 SC75
1
Sep-03-2003
BCR139...
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR139, TS ≤ 102°C BCR139F, TS ≤ 128°C BCR139L3, TS ≤ 135°C BCR139T, TS ≤ 109°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BCR139 BCR139F BCR139L3 BCR139T
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 5 30 100 200 250 250 250
Unit V
mA mW
Tj Tstg Symbol RthJS
150 -65 ... 150 Value
≤ 240 ≤ 90 ≤ 60 ≤ 165
°C
Unit K/W
2
Sep-03-2003
BCR139...
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO V(BR)EBO I CBO h FE VCEsat Vi(off) Vi(on) R1
50 5 120 0.4 0.5 15
22
100 630 0.3 0.8 1.1 29
kΩ
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
VCB = 40 V, IE = 0...