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TC58NYG0S3EBAI4
1 GBIT (128M x 8 BIT) CMOS NAND E2PROM
Description
TC58NYG0S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has two 2112-byte static registe...
Toshiba
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TC58NYG0S3EBAI4
1 GBIT (128M x 8 BIT) CMOS NAND E2PROM
- Toshiba
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