Document
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR12PM
OUTLINE DRAWING
10.5 MAX 5.2
Dimensions in mm
2.8
17 5.0
1.2
TYPE NAME VOLTAGE CLASS
φ3.2±0.2
13.5 MIN
3.6
1.3 MAX
0.8
2.54
2.54
8.5
0.5
2.6
• • • • •
IT (RMS) ...................................................................... 12A VDRM ..............................................................400V/600V IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) V5 Viso ........................................................................ 1500V UL Recognized: File No. E80276
123 2
∗ Measurement point of case temperature
1
1 T1 TERMINAL 2 T2 TERMINAL 3 3 GATE TERMINAL
TO-220F
APPLICATION Switching mode power supply, light dimmer, electric flasher unit, hair driver, control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared kotatsu · carpet, solenoid drivers, small motor control, copying machine, electric tool
MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V
Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Viso
Parameter RMS on-state current Surge on-state current I2t for fusing
Conditions Commercial frequency, sine full wave 360° conduction, Tc =74°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
4.5
Ratings 12 120 60 5 0.5 10 2 –40 ~ +125 –40 ~ +125
Unit A A A2s W W V A °C °C g V
Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Typical value Ta=25°C, AC 1 minute, T 1 · T2 · G terminal to case
2.0 1500
V1. Gate open.
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD R th (j-c) (dv/dt) c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V 2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125°C, VD=1/2VDRM Junction to case V4 Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Test conditions Tj=125°C, V DRM applied Tc=25 °C, ITM=20A, Instantaneous measurement Limits Min. — — — — — — — — 0.2 —
V3
Typ. — — — — — — — — — — —
Max. 2.0 1.6 1.5 1.5 1.5 30 V 5 30 V 5 30 V 5 — 3.5 —
Unit mA V V V V mA mA mA V °C/ W V/µ s
V2. Measurement using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V4. The contact thermal resistance R th (c-f) in case of greasing is 0.5°C/W. V5. High sensitivity (I GT≤20mA) is also available. (IGT item 1 ) (dv/dt) c Symbol R 8 400 L 10 V/µ s R 12 600.