MMDL301T1G

MMDL301T1G Silicon Hot-Carrier Diodes Schottky Barrier Diode These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirements. They are available in a Surface Mount package. Features Extremely Low Minority Carrier Lifetime − 15 ps (Typ) Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage − IR = 13 nAdc (Typ) These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 30 VOLTS SILICON HOT−CARRIER DETECTOR AND SWITCHING DIODES 1 CATHODE 2 ANODE MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage THERMAL CHARACTERISTICS VR 30 V Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, (Note 1) @TA = 25°C Dera...