2SK3774-01SJ

2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) See to P4 Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Drain-source voltage VDS 300 VDSX 300 Continuous Drain Current ID 32 Pulsed Drain Current ID(puls] ±128 Gate-Source Voltage VGS ±30 Maximum Avalanche current IAR 32 Non-Repetitive EAS 597.4 Maximum Avalanche Energy Repetitive EAR 27 Maximum Avalanche Energy Maximum Drain-Source dV/dt dVDS/dt 20 Peak Diode Recovery dV/dt dV/dt 5 Max. Power Dissipation PD 270 2.02 Operating and Storage Tch +150 Temperature range Tstg -55 to +150 Unit V V A A V A mJ Remarks VGS=-30V Note *1 Note *2 mJ Note *3 kV/µs VDS=<300V k...