BCR112...
NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bia...
BCR112...
NPN Silicon Digital
Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ) For 6-PIN packages: two (galvanic) internal isolated
transistors with good matching in one package
BCR112/F/L3 BCR112T/W
C 3
BCR112U
C1 6
B2 5
E2 4
R1
R1
R2 TR2 R1 R2 TR1
R2
1 B
2 E
EHA07184
1 E1
2 B1
3 C2
EHA07174
Type
Marking
Pin Configuration
Package
BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W
WFs WFs WF WFs WFs WFs
1=B 1=B 1=B 1=B 1=B
2=E 2=E 2=E 2=E 2=E
3=C 3=C 3=C 3=C 3=C
-
-
-
SOT23 TSFP-3 TSLP-3-4 SC75 SOT323
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
1
Aug-29-2003
BCR112...
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR112, TS ≤102°C BCR112F, TS ≤128°C BCR112L3, TS ≤135°C BCR112T, TS ≤109°C BCR112U, TS ≤118°C BCR112W, TS ≤124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 10 15 100 200 250 250 250 250 250 150 -65 ... 150 Value
≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 133 ≤ 105
Unit V
mA mW
Tj Tstg Symbol RthJS
°C
Unit K/W
2
Aug-29-2003
BCR112...
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Cha...