BCR108S

BCR 108S NPN Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated Transistors in on package Built in bias resistor (R1=2.2kΩ, R2=47kΩ) Type BCR 108S Marking Ordering Code Pin Configuration WHs Package Q62702-C2414 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115°C Junction temperature Storage temperature Symbol Values 50 50 5 10 100 250 150 - 65 ... + 150 mA mW °C Unit V VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Thermal Resistance Junction ambient 1) RthJA RthJS ≤ 275 ≤ 140 K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Nov-26-1996 BCR 108S Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 50 2.2 0.047 - V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 164 nA VCB = 40 V, IE = 0 Emitter cutoff current IEBO - VEB = 5 V, IC = 0 DC current gain hFE 70 - V 0.3 0.8 1.1 2.9 0.052 kΩ - IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) VCEsat Vi(off) 0.4 IC = 50 mA, IB = 2.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage Vi(on) 0.5 IC = 2 mA,...