BCP 71M
NPN Silicon AF Power Transistor Preliminary data • Drain switch for RF power amplifier stages • For AF driver an...
BCP 71M
NPN Silicon AF Power
Transistor Preliminary data Drain switch for RF power amplifier stages For AF driver and output stages High collector current Low collector-emitter saturation voltage
4 5 3 2 1
VPW05980
Type BCP 71M
Marking Ordering Code Pin Configuration PCs Q62702-C2597
Package
1 = E 2 = C 3 = E 4 = B 5 = C SCT-595
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, T S ≤ 94 °C Junction temperature Storage temperature Symbol Value 32 32 5 3 6 200 500 1.7 150 -65...+150 W °C mA A Unit V
VCEO VCBO VEBO IC I CM IB I BM Ptot Tj T stg
Thermal Resistance Junction ambient 1) Junction - soldering point
RthJA RthJS
≤ 88 ≤ 33
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu
Semiconductor Group Semiconductor Group
11
Au 1998-11-01 -12-1998
BCP 71M
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter
Unit max. 100 20 100 nA µA nA V
min. DC Characteristics Collector-emitter breakdown voltage
typ. -
V(BR)CEO V(BR)CBO V(BR)EBO I CBO I CBO I EBO hFE
32 32 5 -
I C = 10 mA, I B = 0
Collector-base breakdown voltage
I C = 100 µA, IB = 0 Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 8 V, IE = 0
Collector cutoff current
VCB = 8 V, IE = 0 , T A = 150 °C
Emitter cutoff current
VEB = 4 V, I C = 0
DC current gain 1)
I C = 10...