BCP70

BCP 70M PNP Silicon AF Power Transistor Preliminary data For AF driver and output stages High collector current Low collector-emitter saturation voltage 4 5 3 2 1 VPW05980 Type BCP 70M Marking Ordering Code Pin Configuration PBs Q62702-C2596 Package 1 = E 2 = C 3 = E 4 = B 5 = C SCT-595 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, T S ≤ 94 °C Junction temperature Storage temperature Symbol Value 32 32 5 3 6 200 500 1.7 150 -65...+150 W °C mA A Unit V VCEO VCBO VEBO IC I CM IB I BM Ptot Tj T stg Thermal Resistance Junction ambient 1) Junction - soldering point RthJA RthJS ≤ 88 ≤ 33 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11 Jun-05-1998 1998-11-01 BCP 70M Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit max. 100 20 100 nA µA nA V min. DC Characteristics Collector-emitter breakdown voltage typ. - V(BR)CEO V(BR)CBO V(BR)EBO I CBO I CBO I EBO hFE 32 32 5 - I C = 100 µA, IB = 0 Collector-base breakdown voltage I C = 100 µA, IB = 0 Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 30 V, I E = 0 Collector cutoff current VCB = 30 V, I E = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, I C = 0 DC current gain 1) I C = 10 mA, VCE = 5 V I C = 500 mA, V CE = 1 V I C...