BCP68

BCP68 NPN Silicon AF Transistor
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary type: BCP69 (PNP) 4 3 2 1 VPS05163 Type BCP68 BCP68-10 BCP68-16 BCP68-25 Maximum Ratings Parameter Marking BCP 68 1=B BCP 68-10 1 = B BCP 68-16 1 = B BCP 68-25 1 = B Pin Configuration 2=C 2=C 2=C 2=C 3=E 3=E 3=E 3=E 4=C 4=C 4=C 4=C Package SOT223 SOT223 SOT223 SOT223 Symbol VCEO VCES VCBO VEBO Values 20 25 25 5 1 2 100 200 1.5 150 -65 .. 150 Unit V V V A mA W °C Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg Thermal Resistance Junction - soldering point1) RthJS
17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BCP68 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Characteristics Collector-emitter breakdown voltage IC = 30 mA, IB = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 5 mA, VCE = 10 V DC current gain 1) IC = 500 mA, VCE = 1 V hFE hFE ICBO ICBO V...