BL4N65

4A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =2.5Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL4N65 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage ID Continuous Drain Current IDM EAS EAR dv/dt PD RθJA TJ Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt Power Dissipation Thermal resistance,Junction-to-Ambient Junction Temperature TOPR, Tstg Operating and Storage Temperature TO-220AB Value 650 ±30 4.0 16 260 10.6 4.5 36 62.5 +150 -55 to +150 Units V V A A mJ V/ns W ℃/W ℃ ℃ X166 Rev.A www.gmesemi.com 1 Production specification 4A,650V N-Channel Power Mosfet BL4N65 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless...