N-Channel Power Mosfet
2 Amps, 600 Volts N-CHANNEL MOSFET
FEATURES
RDS(on)=3.8Ω@VGS=10V.
Pb
Ultra Low gate charge (typical 9.0nC) Lead-...
Description
2 Amps, 600 Volts N-CHANNEL MOSFET
FEATURES
RDS(on)=3.8Ω@VGS=10V.
Pb
Ultra Low gate charge (typical 9.0nC) Lead-free
Low reverse transfer capacitance (Crss = typical 5.0 pF)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
Production specification
BL2N65I/2N65D
TO-251 TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VDSS ID
IDM VGSS
Drain-Source voltage Drain current continuous Drain current Pulsed (Note2)
Gate -Source voltage
(TC=25℃)
650 2.0
8.0 ±30
V A A V
IAR Avalanche Current (Note2)
2.0 A
EAR EAS dv/dt
Avalanche Energy
Repetitive(Note 2) 4.5
Avalanche Energy
Single Pulse(Note 3) 140
Peak Diode Recovery dv/dt (Note4)
4.5
mJ mJ V/ns
PD Power Dissipation
(TC=25℃) 44
W
TJ Junction Temperature
+150
℃
TSTG
Storage Temperature
-55 ~ +150
℃
θJA
Thermal Resistance Junction-Ambient
50
℃/W
θJc Therm...
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