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BL12N65

GME
Part Number BL12N65
Manufacturer GME
Description N-Channel Power Mosfet
Published May 18, 2018
Detailed Description Production specification N-Channel Enhancement Mode Field Effect Transistor BL12N65 FEATURES  DPAK Worldwide Best RD...
Datasheet PDF File BL12N65 PDF File

BL12N65
BL12N65

Overview
Production specification N-Channel Enhancement Mode Field Effect Transistor BL12N65 FEATURES  DPAK Worldwide Best RDS(on).
 High dv/dt Capability.
 Excellent Switching Performace.
Pb Lead-free  Easy to Drive.
 100% Avalanche Tested.
APPLICATIONS  N-channel Enhancement mode Effect Transistor.
 Switching Applications.
TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VDS Drain-Source Voltage 650 V VGS ID IDM PD IAR EAS dv/dt Gate -Source Voltage Maximum Drain Current(continuous) at TC=25℃ TC=100℃ Drain Current(pulsed)Note1 Power Dissipation at TC=25℃ Avalavche Current,Repetitive or Not-repetitive Single Pu...


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