2N7002W

Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002W FEATURES  Low On-Resistance。  Low Gate Threshold Voltage.  Low Input Capacitance.  Fast Switching Speed.  Low Input/Output Leakage. Pb Lead-free APPLICATIONS  N-channel enhancement mode effect transistor.  Switching application. ORDERING INFORMATION Type No. Marking 2N7002W 7002 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 60 VDGR VGSS ID PD Drain-Gate voltage(RGS≤1MΩ) Gate -Source voltage - continuous -Non Repetitive (tp<50μs) Maximum Drain current -continuous -Pulsed Power Dissipation 60 ±20 ±40 115 800 200 RθJA Thermal resistance,Junction-to-Ambient 625 TJ, Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃/W ℃ F008 Rev.A www.gmesemi.com 1 Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002W ELECTRICAL ...