BL3402

Production specification N-Channel Enhancement Mode Field Effect Transistor BL3402 FEATURES  Electrostatic Sensitive Devices.  VDS (V) = 30V  ID = 4 A  RDS(ON) < 55mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) RDS(ON) < 110mΩ (VGS = 2.5V) Pb Lead-free APPLICATIONS  N-channel enhancement mode effect transistor.  Switching application. ORDERING INFORMATION Type No. Marking BL3402 3402 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 30 VGSS ID IDM PD RθJA Gate -Source voltage Continuous Drain CurrentA Pulsed Drain Current a ±12 @ TA = 25 ℃ 4 @ TA = 70 ℃ 3.4 15 Power Dissipation 1.4 Thermal resistance,Junction-to-Ambient 70 TJ, Tstg Junction and Storage Temperature -55 to +150 Units V V A A W ℃/W ℃ C202 Rev.A www.gmesemi.com 1 Production specification N-Channel Enhancement Mode Field Effect Transistor BL3402 ELECTRICAL CHARACTERISTICS @ Ta=25℃ u...