Document
Production specification
N-Channel 60V(D-S) MOSFET
FEATURES
RDS(ON)≤270mΩ@VGS=10V.
Pb
RDS(ON)≤340mΩ@VGS=4.5V.
Lead-free
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
Electrostatic Sensitive Devices.
MSL 1
APPLICATIONS
Power Management in Note book. DC/DC Converter. Load Switch.
ORDERING INFORMATION
Type No.
Marking
BL2308
2308
BL2308
SOT-23 Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter
VDSS
Drain-Source voltage
VGSS ID IDM PD RθJA
Gate -Source voltage
Continuous Drain current (Tj=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
Power Dissipation
TA=25℃ TA=70℃
Thermal resistance,Junction-to-Ambient(Note1)
TJ Operating Junction Temperature Note:1.The Device Mounted on 1in2 FR4 board with 2 oz copper.
Value
60
±20 1.5 1.2 6 1.3 0.8 100
-55 to +150
Units V V
A A W ℃/W ℃
C235 Rev.A
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