BL2304

Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  Electrostatic Sensitive Devices.  VDS (V) = 30V  ID = 2.6A  RDS(ON) < 70mΩ (VGS = 10V) RDS(ON) < 105mΩ (VGS = 4.5V) Pb Lead-free BL2304 APPLICATIONS  N-channel enhancement mode effect transistor.  Switching application. ORDERING INFORMATION Type No. Marking BL2304 2304 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 30 VGSS ID IDM PD RθJA Gate -Source voltage Continuous Drain CurrentA Pulsed Drain Current a ±20 @ TA = 25 ℃ 2.6 @ TA = 70 ℃ 2.1 10 Power Dissipation 0.75 Thermal resistance,Junction-to-Ambient 166 TJ, Tstg Junction and Storage Temperature -55 to +150 Units V V A A W ℃/W ℃ C321 Rev.A www.gmesemi.com 1 Production specification N-Channel Enhancement Mode Field Effect Transistor BL2304 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specifie...