Production specification
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
RDS(ON) =1.2Ω@VGS = 10V.
Pb
...
Production specification
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
RDS(ON) =1.2Ω@VGS = 10V.
Pb
Ultra Low gate charge (typical 28nC)
Lead-free
Low reverse transfer capacitance (CRSS = typical 12.0 pF)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
BL8N40F
ITO-220AB
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VDS Drain-Source voltage VGS Gate -Source voltage
400 ±30
ID Continuous Drain current TC=25℃ 8
EAS
Single Pulse Avalanche Energy(Note2)
320
EAR
Avalanche Energy,Repetitive(Note1)
2.5
Power Dissipation
39
PD Derate above 25°C
0.312
Units V V A mJ mJ W
W/°C
RθJC
Junction-to-Case
3.18 ℃/W
RθJA
Junction-to-Ambient
62.5 ℃/W
TJ, Tstg
Junction and Storage Temperature
-55 to +150
℃
TL
Maximum Temperature for Soldering
+150
℃
Note: 1.Absolute maximum ratings are those values beyond which the device could be per...
