BL7N65F

7A,650VN-ChannelPowerMosfet FEATURES  RDS(ON)=1.35Ω@VGS = 10V  Ultra low gate charge ( typical 30nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 18 pF )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL7N65F ITO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VDSS VGSS Parameter Drain-Source voltage Gate -Source voltage Value 650 ±20 ID Continuous DrainCurrent 7.0 IDM Pulsed Drain Current EAS Avalanche Energy PD Power Dissipation TJ Junction Temperature Single Pulsed 28 450 100 +150 TOPR, Tstg Operatingand Storage Temperature -55 to +150 Units V V A A mJ W ℃ ℃ S066 Rev.A www.gmesemi.com 1 Production specification 7A,650VN-ChannelPowerMosfet BL7N65F ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS...